IRFP250 Datasheet (PDF)
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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Its fast switching speed, with turn-on and turn-off times in the nanosecond range, makes it highly effective in high-frequency switching
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device
iscN-Channel MOSFET Transistor IRFP250 FEATURES Low drain-source on-resistance RDS (ON) 85m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V
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Part #: IRFP250. Description: N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET. File Size: 255.93 Kbytes. Manufacturer: STMicroelectronics.
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PDF version includes complete article with source references. Suitable for printing and offline reading.